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IS62WV25616BLL-55TI 参数 Datasheet PDF下载

IS62WV25616BLL-55TI图片预览
型号: IS62WV25616BLL-55TI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低电压,超低功耗CMOS静态SRAM [256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS62WV25616ALL, IS62WV25616BLL
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(CS1 Controlled,
OE
= HIGH or LOW)
t
WC
ISSI
®
ADDRESS
t
SCS1
t
HA
CS1
t
AW
WE
LB, UB
t
SA
t
HZWE
t
PWE
t
PWB
t
LZWE
HIGH-Z
DOUT
DATA UNDEFINED
t
SD
t
HD
DIN
DATA-IN VALID
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1
and
WE
inputs and at
least one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (CS1) [ (LB) = (UB) ] (WE).
WRITE CYCLE NO. 2
(WE Controlled:
OE
is HIGH During Write Cycle)
t
WC
ADDRESS
OE
t
SCS1
t
HA
CS1
t
AW
WE
t
PWE
LB, UB
t
SA
t
HZWE
HIGH-Z
t
LZWE
DOUT
DATA UNDEFINED
t
SD
t
HD
DIN
DATA-IN VALID
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
9