IS63LV1024
IS63LV1024L
IS63LV1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC1
VDD Operating
Supply Current
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
—
—
—
160
170
105
—
—
—
150
160
95
—
—
—
—
130
140
75
mA
typ.(2)
Ind. (@15 ns)
90
ISB
TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = Max
Com.
Ind.
—
—
55
55
—
—
45
45
—
—
40
40
mA
mA
mA
ISB1
ISB2
TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
—
—
25
30
—
—
25
30
—
—
25
30
CMOS Standby
Current
VDD = Max.,
CE ≥ VDD – 0.2V,
Com.
Ind.
—
—
—
5
10
0.5
—
—
—
5
10
0.5
—
—
—
5
10
0.5
typ.(2)
(CMOS Inputs)
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.
IS63LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC1
ISB
VDD Operating
Supply Current
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
—
—
—
100
110
75
—
—
—
95
105
70
—
—
—
90
100
65
mA
typ.(2)
TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = Max
Com.
Ind.
—
—
35
40
—
—
30
35
—
—
25
30
mA
mA
mA
ISB1
ISB2
TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
—
—
15
20
—
—
15
20
—
—
15
20
CMOS Standby
Current
VDD = Max.,
CE ≥ VDD – 0.2V,
Com.
Ind.
—
—
—
1
1.5
0.05
—
—
—
1
1.5
0.05
—
—
—
1
1.5
0.05
typ.(2)
(CMOS Inputs)
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
pF
CIN
InputCapacitance
Input/OutputCapacitance
6
8
CI/O
VOUT = 0V
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. I
1/26/07
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
