IXBD4410
IXBD4411
Symbol
V
DD
/V
EE
V
in
I
in
I
o
(rev)
P
D
P
D
T
A
T
JM
T
stg
T
L
R
thJA
R
thJC
Definition
Supply Voltage
Input Voltage (INH, INL)
Input Current (INL, INH, IM)
Peak Reverse Output Current (OUT)
Maximum Power Dissipation (T
A
= 25° C)
T
C
= 25° C (16-Pin SOIC)
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature Range
Lead Soldering Temperature for 10 s
(16-Pin SOIC)
Maximum Ratings
-0.5 ... 24
-0.5...V
DD
+0.5
±10
2
600
10
-40 ... 85
150
-55 ... 150
300
1.67
10
V
V
A
A
mW
W
°C
°C
°C
°C
K/W
K/W
Die substrate
connected to tab
Dimensions in inch (1" = 25.4 mm)
16-Pin SOIC
Recommended Operating Conditions
V
DD
/V
EE
V
DD
/LG
L
Gh
/L
Gl
Symbol
Supply Voltage
Maximum Common Mode dv/dt
10 ... 20
V
10 ... 16.5
V
±50
V/ns
Definition/Condition
Characteristic Values
(T
A
= 25°C, V
DD
= 15 V, unless otherwise specified)
min.
typ.
max.
INL, INH Inputs (referred to LG)
V
t+
V
t-
V
ih
I
in
C
in
Positive-Going Threshold
Negative-Going Threshold
Input Hysteresis
Input Leakage Current/V
in
=V
DD
or LG
Input Capacitance
3.65
1
1
-1
10
1
V
V
V
µA
pF
16-Pin Plastic DIP
Open Drain Fault Output (referred to LG)
V
oh
V
ol
HI Output/R
pu
= 10 kΩ to V
DD
LO Output/I
o
= 4 mA
V
DD
-0.05
0.3
0.5
V
V
OUT Output (referred to LG)
V
oh
V
ol
R
o
R
o
I
pk
HI Output/I
o
= -5 mA
LO Output/I
o
= 5 mA
Output HI Res./I
o
= -0.1 A
Output LO Res./I
o
= 0.1 A
Peak Output Current/C
L
= 10 nF
V
DD
-0.05
V
EE
+0.05
3
3
2
V
V
Ω
Ω
A
End view
5
4
1.5
IM Input (referred to KG)
V
t+
C
in
R
s
Positive-Going Threshold
Input Capacitance
Shorting Device Output Resistance
0.24
50
0.3
10
75
0.45
100
V
pF
Ω
VEE Supply (referred to LG)
V
EE
I
out
f
inv
V
EEF
Output Voltage/I
o
= 1 mA, C
o
= 1
µF
Output Current/V
out
= 0.70 • V
EE
Inverting Frequency
Undervoltage Fault Indication
-5
-20
-3
-6.5
-25
600
-7.5
V
mA
kHz
V
-4.8
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IXYS [ IXYS CORPORATION ]
