Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFH 12N100F V
DSS
IXFT 12N100F I
D25
R
DS(on)
= 1000 V
=
12 A
= 1.05
Ω
t
rr
≤
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
(TAB)
1000
1000
±20
±30
12
48
12
30
1.0
5
300
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
G = Gate,
S = Source,
TO-268 (IXFT) Case Style
G
S
D = Drain,
TAB = Drain
(TAB)
1.13/10 Nm/lb.in.
6
4
g
g
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.5 V
±100
nA
50
µA
1.5 mA
1.05
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 125°C
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98856 (8/01)
IXYS [ IXYS CORPORATION ]
