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IXFH12N100F 参数 Datasheet PDF下载

IXFH12N100F图片预览
型号: IXFH12N100F
PDF下载: 下载PDF文件 查看货源
内容描述: HiPerRF功率MOSFET [HiPerRF Power MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 101 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXFH12N100F的Datasheet PDF文件第1页  
IXFH 12N100F
IXFT 12N100F
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Note 1
8
12
2700
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
305
93
12
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2.0
(External)
9.8
31
12
77
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
16
42
0.42
(TO-247)
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
2.87
3.12
b
2
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1
2
3
TO-247 AD Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
12
48
1.5
250
A
A
V
ns
µC
A
TO-268 Outline
I
F
= I
S
,-di/dt = 100 A/µs, V
R
= 100 V
0.8
7
Note: 1. Pulse test, t
300
µs,
duty cycle d
2 %
Min Recommended Footprint
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025