PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 80N50P
t
rr
R
DS(on)
V
DSS
I
D25
= 500 V
= 66 A
65 mΩ
≤
Ω
≤
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Transient
Continuous
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 2
Ω
T
C
= 25° C
Maximum Ratings
500
500
±
40
±
30
66
200
80
80
3.0
10
700
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either source tab S can be used forsource
current or Kelvin gate return.
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz; I
ISOL
≤
1
mA
300
2500
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/ib.in.
1.5/13 Nm/ib.in.
30
g
Features
l
Fast intrinsic diode
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
UL recognized.
l
Isolated mounting base
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 500
µA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±
200
25
1
65
V
V
nA
µA
mA
mΩ
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2006 IXYS All rights reserved
DS99477E(01/06)
IXYS [ IXYS CORPORATION ]
