IXFN 80N50P
Fig. 7. Input Adm ittance
140
120
100
140
120
100
80
60
40
20
0
4
4.5
5
5.5
6
6.5
7
7.5
0
20
40
60
80
100
120
140
T
J
= -40
°
C
25
°
C
125
°
C
Fig. 8. Transconductance
80
60
40
20
0
T
J
= 125
°
C
25
°
C
-40
°
C
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
250
10
9
200
8
7
150
V
DS
= 250V
I
D
= 40A
I
G
= 10mA
g
f s
- Siemens
I
D
- Amperes
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 125
°
C
T
J
= 25
°
C
0.4
0.6
0.8
1
1.2
1.4
1.6
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160 180 200
100
50
0
V
S D
- Volts
Fig. 11. Capacitance
100000
f = 1MHz
1000
Q
G
- NanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Capacitance - PicoFarads
10000
R
DS(on)
Limit
I
D
- Amperes
C iss
100
25µs
100µs
10
1ms
T
J
= 150
°
C
T
C
= 25
°
C
1
10ms
1000
C oss
100
C rss
10
0
5
10
15
20
25
30
35
40
DC
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
1000
V
D S
- Volts
IXYS [ IXYS CORPORATION ]
