IXTQ 52N30P
IXTT 52N30P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
20
30
3490
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
550
130
24
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4
Ω
(External)
22
60
20
110
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
53
0.31
(TO-3P)
0.21
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
TO-3P (IXTQ) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
52
150
1.5
250
3.0
A
A
V
ns
µC
TO-268 Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25A
-di/dt = 100 A/µs
V
R
= 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXYS [ IXYS CORPORATION ]
