IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
TO-3P Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
40
56
6300
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
240
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 3.3
Ω
(External)
26
100
28
185
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
43
91
0.21
TO-3P
TO-264
0.21
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
K/W
1
2
3
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
typ.
Max.
100
250
1.5
200
3.0
A
A
V
ns
µC
TO-268 Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A
-di/dt = 100 A/µs
V
R
= 100 V
TO-264 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXYS [ IXYS CORPORATION ]
