IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 7. Input Adm ittance
150
90
80
125
70
100
60
50
40
30
20
10
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
0
25
50
75
100
125
150
175
200
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
I
D
- Amperes
75
50
25
T
J
= 125ºC
25ºC
-40ºC
V
GS
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
300
10
9
250
200
8
7
V
DS
= 125V
I
D
= 50A
I
G
= 10mA
g
fs
- Siemens
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.4
0.6
0.8
1
1.2
1.4
6
5
4
3
2
1
150
100
50
0
0
V
SD
- Volts
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Ope rating Area
1000
R
DS(on)
Limit
T
J
= 150ºC
T
C
= 25ºC
100µs
1ms
10ms
10
DC
25µs
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss
I
D
- Amperes
100
1000
C oss
f = 1MHz
C rss
100
0
5
10
15
1
20
25
30
35
40
10
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
V
DS
- Volts
V
DS
- Volts
IXYS [ IXYS CORPORATION ]
