JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3407
P-Channel Enhancement Mode Field Effect Transistor
SOT-23
General Description
The CJ3407 uses advanced trench technology to provide excellent
R
DS(on)
with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING: 3407
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
stg
Value
-30
±20
-4.1
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
