Electrical characteristics (T
a
=25℃ unless otherwise noted)
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Gate threshold voltage
Diode forward voltage (note 1)
Dynamic characteristics
(note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics
(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Notes:
1.
2.
Pulse test: Pulse width
≤300µs,
duty cycle
≤2%.
These parameters have no way to verify.
t
d(on)
t
r
t
d(off)
t
f
V
GS
=-10V,V
DS
=-15V,
R
L
=3.6Ω,R
GEN
=3Ω
8.6
5.0
28.2
13.5
ns
ns
ns
ns
C
iss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,f =1MHz
700
120
75
pF
pF
pF
BV
DSS
I
DSS
I
GSS
R
DS(on)
g
FS
V
GS(th)
V
SD
V
GS
= 0V, I
D
=-250µA
V
DS
=-24V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
GS
=-10V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
V
DS
=V
GS
, I
D
=-250µA
I
S
=-1A,V
GS
=0V
5.5
-1
-3
-1
-30
-1
±100
60
87
V
µA
nA
mΩ
mΩ
S
V
V
Symbol
Test Condition
Min
Typ
Max
Units
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
