Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5597
V
CEO
Collector-emitter
sustaining voltage
2N5599/5601
2N5603
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5597/5601
h
FE
DC current gain
2N5599/5603
2N5597/5601
f
T
Transition frequency
2N5599/5603
2N5597 2N5599 2N5601 2N5603
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
=50mA ;I
B
=0
80
100
V
I
C
=1A; I
B
=0.1A
I
C
=1A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
70
I
C
=1A ; V
CE
=5V
30
60
I
C
=0.5A ; V
CE
=10V
50
1.0
1.5
0.1
1.0
0.1
200
90
V
V
mA
mA
mA
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
