Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5605
V
CEO
Collector-emitter
sustaining voltage
2N5607/5609
2N5611
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5605/5609
h
FE
DC current gain
2N5607/5611
2N5605/5609
f
T
Transition frequency
2N5607/5611
2N5605 2N5607 2N5609 2N5611
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
=50mA ;I
B
=0
80
100
V
I
C
=1A; I
B
=0.1A
I
C
=2.5A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
70
I
C
=2.5A ; V
CE
=5V
30
70
I
C
=0.5A ; V
CE
=10V
60
0.5
1.5
0.1
1.0
0.1
200
90
V
V
mA
mA
mA
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
