Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5989
V
CEO
Collector-emitter
sustaining voltage
2N5990
2N5991
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N5989
I
CEO
Collector cut-off current
2N5990
2N5991
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=6A ;I
B
=0.6A
I
C
=12A; I
B
=1.8A
I
C
=12A; I
B
=1.8A
I
C
=6A ; V
CE
=2V
V
CE
=20V; I
B
=0
V
CE
=30V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.2A ;I
B
=0
2N5989 2N5990 2N5991
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.6
1.7
2.5
1.4
V
V
V
V
2.0
mA
V
CE
=RatedV
CE
;V
BE
=-1.5V
T
C
=125℃
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=2V
I
C
=6A ; V
CE
=2V
I
C
=12A ; V
CE
=2V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=10V;f=1MHz
2.0
40
20
7.0
0.2
2.0
1.0
mA
mA
120
300
pF
MHz
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
