Product Specification
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Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6129
V
CEO(SUS)
Collector-emitter
sustioning voltage
2N6130
2N6131
2N6129
V
CEsat
Collector-emitter
saturation voltage
I
C
=0.1A ;I
B
=0
2N6129 2N6130 2N6131
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
1.4
2N6130
2N6131
I
C
=7A;I
B
=1.2A
1.8
I
C
=2.5A ; V
CE
=4V
2N6129
V
CE
=40V;V
BE
=1.5V
T
C
=150℃
V
CE
=60V;V
BE
=1.5V
T
C
=150℃
V
CE
=80V; V
BE
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=2.5A ; V
CE
=4V
I
C
=0.2A ; V
CE
=4V
20
2.5
1.4
0.5
3.0
0.5
3.0
0.5
3.0
1.0
100
MHz
V
V
V
BE
Base-emitter on voltage
mA
I
CEV
Collector cut-off current
2N6130
2N6131
mA
mA
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
