JMnic
Product Specification
Silicon PNP Power Transistors
2SA1110
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC2590
・Excellent
current I
C
characteristics of forward
current transfer ratio h
FE
vs. collector
・High
transition frequency f
T
・Optimum
for the driver stage of a 40w to
60w output amplifier
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
-0.5
-1.0
1.2*
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Note) *: Without heat sink
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
