JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-100μA;I
B
=0
I
E
=-10μA ;I
C
=0
I
C
=-0.3A ;I
B
=-30mA
I
C
=-0.3A ;I
B
=-30mA
I
C
=-150mA ; V
CE
=-10V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-50mA ; V
CB
=-10V,
65
50
MIN
-120
-5
2SA1110
TYP.
MAX
UNIT
V
V
-1.0
-1.2
330
100
30
200
V
V
pF
MHz
h
FE-1
Classifications
P
65-110
Q
90-155
R
130-220
S
185-330
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
