JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-0.1A; I
B
=0
I
E
=-10mA; I
C
=0
I
C
=-5 A;I
B
=-0.5 A
I
C
=-5A ; V
CE
=-5V
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-10V
I
E
=0; V
CB
=-10V;f=1MHz
55
20
450
MIN
-150
-5
TYP.
2SB755
MAX
UNIT
V
V
-2.0
-1.5
-50
-50
160
V
V
μA
μA
MHz
pF
h
FE
classifications
R
55-110
O
80-160
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
