Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=3A ;I
B
=0.3A
I
C
=3A ;I
B
=0.3A
I
C
=10mA; I
B
=0
V
CB
=30V;I
E
=0
V
EB
=3V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1.0A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1.0MHz
I
C
=0.1A ; V
CE
=5V
20
40
55
65
30
MIN
TYP.
2SC1096
MAX
2.0
2.0
UNIT
V
V
V
1.0
1.0
μA
μA
250
pF
MHz
h
FE-1
classifications
N
40-60
M
50-100
L
80-160
K
120-250
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
