JMnic
Product Specification
Silicon NPN Power Transistors
2SC867
DESCRIPTION
・With
TO-66 package
・High
collector-base breakdown voltage
:V
CBO
=400V(min)
APPLICATIONS
・For
high voltage and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
150
5
1
2
23
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃