R
JCS12N60T
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
15V
10V
8V
Top
7V
6.5V
6V
10
5.5V
10
Bottom 5V
25
℃
150
℃
1
Notes:
Notes:
1.250μs pulse test
2.VDS=40V
1. 250μs pulse test
1
2. TC=25℃
0.1
2
4
6
8
10
1
10
VGS [V]
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.85
0.80
10
VGS=10V
0.75
0.70
0.65
25
℃
1
150
℃
0.60
VGS=20V
Notes:
1. 250μs pulse test
2. VGS=0V
0.55
Note:Tj=25
℃
0.50
0.1
0
2
4
6
8
10
12
14
16
18
20
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
ID [A]
VS D [V]
Gate Charge Characteristics
Capacitance Characteristics
3
3x10
12
C =C +C (C =shorted)
iss
gs
gd ds
VDS=480V
VDS=300V
VDS=120V
C =C +C
gd
oss
ds
10
8
C =C
rss
gd
3
2x10
6
3
4
1x10
2
0
0
0
10
20
30
40
-1
0
10
1
10
10
Qg Toltal Gate Charge [nC]
VDS Drain-Source Voltage [V]
版本：201010C
5/10
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
