R
JCS730
ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
10
特征曲线
On-Region Characteristics
V
GS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Top
I
D
[A]
10
I
D
[A]
25
℃
150
℃
1
Notes
：
1. 250μs pulse test
2. T
C
=25
℃
1
1
10
0.1
2
4
6
Notes
：
1.250μs pulse test
2.V
DS
=40V
8
10
V
DS
[V]
V
GS
[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.05
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
R
DS
(on ) [
Ω
]
1.00
25
℃
I
DR
[A]
1
0.95
V
GS
=10V
V
GS
=20V
0.90
0.85
150
℃
Note
：
j
=25
℃
T
0.1
0.4
0.80
Notes
：
1. 250μs pulse test
2. V
GS
=0V
0.8
1.0
1.2
1.4
1.6
0.75
0
1
2
3
4
5
6
7
8
0.6
I
D
[A]
V
SD
[V]
Capacitance Characteristics
12
Gate Charge Characteristics
V
DS
=320V
10
V
DS
=200V
V
GS
Gate Source Voltage[V]
8
V
DS
=80V
6
4
2
0
0
4
8
12
16
20
24
28
32
Q
g
Toltal Gate Charge [nC]
版本：201007A
5/14
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
