R
JCS9N50T
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transfer Characteristics
On-Region Characteristics
VGS
Top
15V
10V
9V
8V
7V
10
6.5V
6V
10
5.5V
Bottom 5V
25℃
150℃
1
Notes:
1. 250μs pulse test
2. TC=25℃
Notes:
1.250μs pulse test
2.VDS=40V
1
0.1
2
4
6
8
10
1
10
VGS [V]
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.00
0.95
10
VGS=10V
0.90
0.85
0.80
25℃
1
0.75
VGS=20V
Notes:
1. 250μs pulse test
2. VGS=0V
0.70
150℃
Note:Tj=25℃
0.65
0.60
0.1
0.2
0
2
4
6
8
10
12
14
16
18
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
ID [A]
VSD [V]
Gate Charge Characteristics
Capacitance Characteristics
3
12
10
8
3x10
VDS=400V
VDS=250V
C =C +C (C =shorted)
iss
gs
gd ds
C =C +C
gd
oss
ds
C =C
rss
gd
VDS=100V
3
2x10
6
3
4
1x10
2
0
0
-1
0
10
1
10
0
10
20
30
10
VDS Drain-Source Voltage [V]
Qg Toltal Gate Charge [nC]
版本：201010C
5/10
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
