R
JCS9N50T
On-Resistance Variation
vs. Temperature
4.0
3.5
特征曲线
ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
vs. Temperature
1.2
BV -(DS ) (Normalized)
1.1
3.0
R
D (on )
(Normalized)
2.5
2.0
1.5
1.0
0.5
0.0
-75
1.0
0.9
Notes:
1. V
GS
=0V
2. I
D
=250μA
-50
-25
0
25
50
75
100
125
150
Notes:
1. V
GS
=10V
2. I
D
=4.5A
-50
-25
0
25
50
75
100
125
150
0.8
-75
T
j
[
℃
]
T
j
[
℃
]
Maximum Safe Operating Area
For JCS9N50CT
10
2
Maximum Safe Operating Area
For JCS9N50FT
10
2
Operation in This Area
is Limited by R
DS(ON)
10μs
100μs
Operation in This Area
is Limited by R
DS(ON)
I
D
Drain Current [A]
I
D
Drain Current [A]
10μs
1
10
1
1ms
10ms
10
100μs
1ms
10
0
10
-1
Note:
1 T
C
=25
℃
2 T
J
=150
℃
3 Single Pulse
0
100ms
DC
10
0
10ms
Note:
1 T
C
=25
℃
2 T
J
=150
℃
3 Single Pulse
0
100ms
DC
10
3
10
2
-1
10
V
DS
Drain-Source Voltage [V]
10
1
10
10
V
DS
Drain-Source Voltage [V]
10
1
10
2
Maximum Drain Current
vs. Case Temperature
10
8
I
D
Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T
C
Case Temperature [
℃
]
版本：201010C
6/10
JSMC [ JILIN SINO-MICROELECTRONICS CO., LTD. ]
