IRFR/U3910
1200
1000
C , C apac itanc e (pF )
C
iss
800
600
C
oss
400
V
G S
, G ate-to-S o urc e V oltage (V )
V
GS
C
is s
C
rss
C
os s
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
gd
, C
ds
S H O R T E D
C
gd
C
ds
+ C
gd
20
I
D
= 9 .0A
V
D S
= 80 V
V
D S
= 50 V
V
D S
= 20 V
16
12
8
C
rs s
200
4
0
1
10
100
A
0
0
5
10
15
20
FO R TE S T C IR C U IT
S E E F IG U R E 1 3
25
30
35
40
45
A
V
D S
, Drain-to-S ourc e Voltage (V)
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse D rain C urrent (A)
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
I
D
, Drain C urrent (A )
100
T
J
= 1 75 °C
10
10µ s
T
J
= 2 5°C
10
100µ s
1
0.4
0.6
0.8
1.0
1.2
V
G S
= 0 V
1.4
A
1.6
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
1m s
10m s
100
1000
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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