SMD Type
MOSFET
P-Channel 2.5V Specified Enhancement
Mode Field Effect Transistor
KDB4020P
(FDB4020P)
TO
-
263
+0.1
1.27
-0.1
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
-16 A, -20 V. R
DS(on)
= 0.08 Ù @ V
GS
= -4.5 V
R
DS(on)
= 0.11 Ù @ V
GS
= -2.5 V.
+0.2
8.7
-0.2
Critical DC electrical parameters specified at elevated
temperature.
High density cell design for extremely low R
DS(on)
.
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
T
C
=25
Symbol
V
DSS
V
GSS
I
D
I
dp
P
D
R
èJC
R
èJA
T
ch
T
stg
Rating
-20
8
-16
-48
37.5
0.25
4
40
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
Drain current-pulsed
Power dissipation
Derate above 25
Thermal Resistance, Junction-to- Case
Thermal Resistance Junction to Ambient
Channel temperature
Storage temperature
5.60
1 Gate
2 Drain
3 Source
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