SMD Type
MOSFET
KDB4020P(FDB4020P)
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
IDSS
Testconditons
ID=250ìA VGS=0V
Min
-20
Typ
Max
Unit
V
Drain to source breakdown voltage
Drain cut-off current
-1
VDS=-16V,VGS=0,TC=25
VGS= 8V,VGS=0V
A
Gate leakage current
IGSS
nA
V
100
-1
Gate threshold voltage
VGS(th)
VDS = VGS, ID = -250ìA
VGS=-4.5V,ID=-8A
-0.4 -0.58
0.068 0.08
0.098 0.13
0.096 0.110
Drain to source on-state resistance
RDS(on)
Ù
VGS=-4.5V,ID=-8A,TJ=125
VGS=-2.5V,ID=-7A
On-State Drain Current
Forward Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Rise time
ID(on)
gFS
Ciss
Coss
Crss
Qg
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -8 A
-20
A
14
665
270
70
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
VDS=-10V,VGS=0,f=1MHZ
VDS = -5 V,
9.5
1.3
2.2
8
13
Qgs
Qgd
ton
ID = -16 A, VGS = -4.5 V *
16
38
80
45
tr
24
50
29
VDD = -5 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ù*
Turn-off delay time
Fall time
toff
tf
Maximum Continuous Drain-Source
Diode Forward Current
IS
-16
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-48
A
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = -16 A *
-1.2
* Pulse Test: Pulse Width
300 ìs, Duty Cycle
2.0%
2
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