PreLIMINArY INforMAtIoN L9D112G80BG4
1.2 Gb, DDR - SDRAM Integrated Module (IMOD)
wr it e
The WRITE command is used to initiate a burst WRITE access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided
on inputs A0-A8 selects the starting column location. The value on the input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRE-
CHARGE is selected, the row being accessed will be AUTO PRECHARGED at the end of the WRITE burst; If AUTO PRECHARGE is not selected, the row will
remain open for subsequent accesses. Input data appearing on the DQ lines is written to the memory array subject to DQMLx, DQMHx for each WORD. If a
given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will
be ignored, and a WRITE will not be executed to that byte column location.
write co m m a n D
CK#
CK
CKE HIGH
CS#
RAS#
CAS#
WE#
Address
A10
Col
EN AP
DIS AP
Bank
BA0, BA1
Don’t Care
Note:
EN AP = enable auto precharge
DIS AP = disable auto precharge..
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
15
Feb 2, 2009 LDS-L9D112G80BG4-C
LOGIC [ LOGIC DEVICES INCORPORATED ]
