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L9D112G80BG4M6 参数 Datasheet PDF下载

L9D112G80BG4M6图片预览
型号: L9D112G80BG4M6
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2 GB , DDR - SDRAM集成模块 [1.2 Gb, DDR - SDRAM Integrated Module]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 45 页 / 6016 K
品牌: LOGIC [ LOGIC DEVICES INCORPORATED ]
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PreLIMINArY INforMAtIoN
L9D112G80BG4
1.2 Gb, DDR - SDRAM Integrated Module (IMOD)
REGISTER DEFINITION
c
ommanDs
The TRUTH TABLE (below) provides a quick reference of available commands, followed by a written description of each command.
t
ruth
t
aBle
Name (Function)
Deselect (NOP)
No Operation (NOP)
ACTIVE (select bank and activate row)
READ (select bank and column, and start READ burst)
WRITE (select bank and column and start WRITE burst)
BURST TERMINATE
PRECHARGE (deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH (enter soft refresh mode)
LOAD MODE REGISTER
CSx\
H
L
L
L
L
L
L
L
L
RASx\
X
H
L
H
H
H
L
L
L
CASx\
X
H
H
L
L
H
H
L
L
WEx\
X
H
H
H
L
L
L
H
L
ADDR
X
X
Bank/Row
Bank/Column
Bank/Column
X
Code
X
OP Code
Notes
1,9
1,9
1,3
1,4
1,4
1,8
1,5
6,7
1,2
t
ruth
t
aBle
- Dm o
Peration
Name (Function)
WRITE ENABLE
WRITE INHIBIT
NOTES:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A
0
-A
12
define the op-code to be written to the selected MODE
REGISTER BA
0
, BA
1
select either the MODE REGISTER or the
EXTENDED MODE REGISTER.
3. A
0
-A
12
provide row addresses, and BA
0
, BA
1
provide bank addresses.
4. A
0
-A
8
provide column address; A
10
HIGH enables the AUTO
PRECHARGE feature (non-persistent), while A
10
LOW disables the
AUTO PRECHARGE feature; BA
0
, BA
1
provide bank address.
5. A
10
LOW; BA
0
, BA
1
determine the bank being PRECHARGED. A
10
HIGH all banks PRECHARGED and BA
0
, BA
1
or “Don’t Care”.
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if
CKE is LOW.
7. Internal REFRESH counter controls row addressing; all inputs and I/Os
are “Don’t Care” except for CLE.
8. Applies only to READ bursts with AUTO PRECHARGE disabled. This
command is undefined (and should not be used) for READ burst with
AUTO PRECHARGE enabled.
9. DESELECT and NOP are functionally interchangeable.
10. Used to mask WRITE data; provided coincident with the corresponding
data.
DQMLx, DQMHx
L
H
DQSLx, DQSHx
Valid
X
Notes
1,10
1,10
D
eselect
The DESELECT function (CSx\=HIGH) prevents new commands from being executed by the DDR IMOD. The IMOD is effectively deselected. Operations
already in progress are not affected.
LOGIC Devices Incorporated
www.logicdevices.com
12
High Performance, Integrated Memory Module Product
Feb 2, 2009 LDS-L9D112G80BG4-C