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BC856BWT1 参数 Datasheet PDF下载

BC856BWT1图片预览
型号: BC856BWT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistors(PNP Silicon)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 215 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC857/BC858
2.0
–1.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V
CE
= –10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
–10 mA
I
C
= –50 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
I
C
= –20 mA
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
10.0
400
C
ib
T
A
=25°C
C, CAPACITANCE(pF)
5.0
300
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
7.0
200
150
100
80
V
CE
= –10V
T
A
= 25°C
3.0
C
ob
2.0
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
K5–3/5