欢迎访问ic37.com |
会员登录 免费注册
发布采购

L8050QLT1 参数 Datasheet PDF下载

L8050QLT1图片预览
型号: L8050QLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [General Purpose Transistors NPN Silicon]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 46 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号L8050QLT1的Datasheet PDF文件第1页浏览型号L8050QLT1的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
L8050*LT1
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
V
(BR)EBO
(I
E
=100µΑ)
Collector-Base Breakdown Voltage
V
(BR)CBO
(I
C
=100µΑ)
Collector Cutoff Current (V
CB
=35V)
Emitter Cutoff Current (V
EB
=4V)
I
CBO
I
EBO
150
150
nA
nA
40
V
5
V
25
V
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
DC Current Gain
I
C
=100mA,V
CE
=1V
h
FE
150
-
600
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(I
C
=800mA)
V
CE(S)
-
-
0.5
V
NOTE :
*
h
F E
P
100~200
Q
150~300
R
200~400
S
300~600
L8050*LT1–2/3