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MMBT5551LT1 参数 Datasheet PDF下载

MMBT5551LT1图片预览
型号: MMBT5551LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( NPN硅) [High Voltage Transistors(NPN Silicon)]
分类和应用: 晶体晶体管高压
文件页数/大小: 4 页 / 163 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
MMBT5550LT1
, TEMPERATURE COEFFICIENT (mV/°C)
MMBT5551LT1
2.5
2
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
0.1
t
r
, t
f
<10 ns
DUTY CYCLE = 1.0%
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
Values Shown are for I
C
@ 10 mA
10 ms
0.25 mF
10.2 V
T
J
= –55°C to +135°C
θ
VC
for V
CE(sat)
V
in
V
BB
–8.8 V
100
R
B
V
CC
3.0 k
30 V
R
C
θ
VB
for V
BE(sat)
INPUT PULSE
5.1 k
V
in
100
1N914
V
out
θ
V
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
70
50
30
1000
T
J
= 25°C
500
300
200
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
C, CAPACITANCE (pF)
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
20
t, TIME (ns)
C
ibo
100
50
30
20
10
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
C
obo
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitances Figure
8. Turn–On Time
5000
t
f
@ V
CC
= 120 V
3000
2000
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
1000
500
300
200
t, TIME (ns)
t
s
@ V
CC
= 120 V
100
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
M20–4/4