®
LY6251216
Rev. 1.0
512K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY6251216 is a 8,388,608-bit low power CMOS
static random access memory organized as 524,288
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6251216 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6251216 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 8μA (TYP.) LL-version
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY6251216
LY6251216(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
8µA(LL)
45/30mA
8µA(LL)
45/30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
Vcc
Vss
A0 - A18
CE#
WE#
OE#
LB#
UB#
V
CC
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
DQ0 – DQ15 Data Inputs/Outputs
DECODER
512Kx16
MEMORY ARRAY
A0-A18
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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