Simple, Efficient, 1-Cell Li+ Pulse Charger
MAX1879
ABSOLUTE MAXIMUM RATINGS
IN,
CHG,
GATE to GND..........................................-0.3V to +26V
BATT, TSEL, THERM, ADJ to GND...........................-0.3V to +6V
GATE to IN................................................................-6V to +0.3V
THERM, ADJ to BATT...............................................-6V to +0.3V
GATE Continuous Current ................................................ -10mA
Continuous Power Dissipation (TA = +70°C)
8-Pin µMAX (derate 4.1mW/°C above +70°C) ............ 330mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
IN
= V
CHG
= +10V, V
BATT
= +4.2V, TSEL = GND, GATE = unconnected, ADJ = unconnected, THERM = 10kΩ to GND,
T
A
= 0°C to
+85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER
Input Voltage (Note 1)
Undervoltage Lockout Trip Point
Undervoltage Lockout Trip-Point
Hysteresis
Fast-Charge Qualification
Threshold
Fast-Charge Restart Threshold
Fast-Charge Reset Threshold
Delay
Precharge Source Current
BATT Regulation Voltage
BATT Regulation Adjust Range
ADJ Source Impedance
ADJ Output Voltage
BATT Removal Detection
Threshold
BATT Removal Detection
Threshold Hysteresis
BATT Input Current (Note 4)
BATT Input Current, Fast-Charge
State
BATT Input Current, Done State
IN Input Current, Fast-Charge
State
IN Input Current, Done State
Timer Accuracy
CHG
Output Leakage Current
CHG
Output Sink Current
V
CHG
= 22V,
CHG
= high
V
CHG
= 1.0V,
CHG
= low
I
BATT
I
BATT
I
IN
I
IN
No load on ADJ
BATT rising
BATT falling
V
IN
≤
V
BATT
- 0.3V
V
BATT
= 4.0V
V
BATT
= 4.25V, V
IN
present
V
BATT
= 4.0V, V
IN
= 4.0V
V
BATT
= 4.25V, V
IN
= 22V
-10
-1
4
5
SYMBOL
V
IN
BATT rising
BATT falling
BATT rising, transition from precharge to
full current
BATT falling, transition from Done to
Prequalification state (Note 2)
(Note 3)
V
BATT
= 2V
5
4.1685
4.0
9.8
1.393
4.875
10
1.400
5
125
0.1
900
85
50
700
1.5
1500
200
500
1200
+10
+1
6
2.425
3.92
CONDITIONS
External PMOS FET off
MIN
4.4
2.1
2.2
60
2.5
4.00
1
8
4.2000
12
4.2315
4.2
10.2
1.407
5.125
2.575
4.08
TYP
MAX
22
2.3
UNITS
V
V
mV
V
V
ms
mA
V
V
kΩ
V
V
mV
µA
µA
µA
µA
µA
%
µA
mA
2
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