4 Megabit (512k x 8-bit) EEPROM MCM
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Output Enable to Write Setup Time
-120
-150
-200
Output Enable Hold Time
-120
-150
-200
Write Cycle Time
2
-120
-150
-200
Data Latch Time
-120
-150
-200
Byte Load Window
-120
-150
-200
Byte Load Cycle
-120
-150
-200
Time to Device Busy
-120
-150
-200
Write Start Time
3
-120
-150
-200
RES to Write Setup Time
-120
-150
-200
V
CC
to RES Setup Time
4
-120
-150
-200
1. Use this divice in a longer cycle than this value.
S
YMBOL
t
OES
S
UBGROUPS
9, 10, 11
0
0
0
t
OEH
9, 10, 11
0
0
0
t
WC
9, 10, 11
--
--
--
t
DL
9, 10, 11
250
300
400
t
BL
9, 10, 11
100
100
200
t
BLC
9, 10, 11
0.55
0.55
0.95
t
DB
9, 10, 11
100
120
170
t
DW
9, 10, 11
150
150
250
t
RP
9, 10, 11
100
100
200
t
RES
9, 10, 11
1
1
3
M
IN1
79C0408
M
AX
--
--
--
ns
--
--
--
ms
10
10
10
ns
--
--
--
µs
--
--
--
µs
30
30
30
ns
--
--
--
ns
--
--
--
µs
--
--
--
µs
--
--
--
U
NIT
ns
T
ABLE
8. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATIONS
Memory
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
10.13.04 Rev 15
All data sheets are subject to change without notice
6
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
