4 Megabit (512k x 8-bit) EEPROM MCM
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
79C0408
T
ABLE
9. 79C0408 M
ODE
S
ELECTION 1, 2
P
ARAMETER
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
Program
1. X = Don’t care.
CE
3
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out (I/O7)
High-Z
RES
V
H
X
V
H
V
H
X
X
V
H
V
IL
RDY/BUSY
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
Memory
2. Refer to the recommended DC operating conditions.
3. For CE
1-4
only one CE can be used (“on”) at a time.
F
IGURE
1. R
EAD
T
IMING
W
AVEFORM
10.13.04 Rev 15
All data sheets are subject to change without notice
7
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
