Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1. I
LI
on RES = 100 uA max.
2. Only on CE\ Active.
T
ABLE
7. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATIONS1
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-200
-250
Chip Enable Access Time OE = V
IL
, WE = V
IH
-200
-250
Output Enable Access Time CE = V
IL
, WE = V
IH
-200
-250
Output Hold to Address Change CE = OE = V
IL
, WE = V
IH
-200
-250
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-200
-250
CE = OE = V
IL
, WE = V
IH
-200
-250
RES to Output Delay CE = OE = V
IL
, WE = V
IH 3
-200
-250
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
t
CE
9, 10, 11
0
0
t
OE
9, 10, 11
0
0
t
OH
9, 10, 11
0
0-
t
DF
9, 10, 11
0
0
t
DFR
9, 10, 11
0
0
t
RR
9, 10, 11
--
--
520
550
300
350
ns
60
60
--
--
ns
110
120
200
250
ns
200
250
ns
M
IN
M
AX
U
NIT
ns
Memory
ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2.
t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
8. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATIONS
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Setup Time
-200
-250
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
--
--
M
IN1
M
AX
U
NIT
ns
01.11.05 Rev 7
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies
All rights reserved.