Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
M
IN1
1
1
M
AX
--
--
ns
150
150
--
--
ns
150
150
--
--
µs
100
100
--
--
µs
1
1
--
--
U
NIT
µs
T
ABLE
8. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATIONS
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Byte Load Cycle
-200
-250
Time to Device Busy
-200
-250
Write Start Time
3
-200
-250
RES to Write Setup Time
-200
-250
V
CC
to RES Setup Time
4
-200
-250
1. Use this divice in a longer cycle than this value.
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
S
YMBOL
t
BLC
S
UBGROUPS
9, 10, 11
t
DB
9, 10, 11
t
DW
9, 10, 11
t
RP
9, 10, 11
t
RES
9, 10, 11
Memory
T
ABLE
9. 79LV0408 M
ODE
S
ELECTION 1, 2
P
ARAMETER
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
Program
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE
1-4
only one CE can be used (“on”) at a time.
CE
3
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out (I/O7)
High-Z
RES
V
H
X
V
H
V
H
X
X
V
H
V
IL
RDY/BUSY
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
01.11.05 Rev 7
All data sheets are subject to change without notice
6
©2005 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
