Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
F
IGURE
7. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(1) (
IN PROTECTION MODE
)
1
1)R
EPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES
.
Memory
F
IGURE
8. S
OFTWARE
D
ATA
P
ROTECTION
W
AVEFORM
(2) (
IN NON
-
PROTECTION MODE
)
1
1) R
EPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES
.
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 dwords of data to be written into the EEPROM in a single write cycle. Loading
the first dword of data, the data load window opens 30µ s for the second dword. In the same manner each additional
dword of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept
01.10.05 Rev 8
All data sheets are subject to change without notice
12
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
