Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
T
ABLE
5. 79LV0832 C
APACITANCE
(T
A
= 25
°
C, f = 1 MHz)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
S
YMBOL
C
IN
C
IN
OE
C
IN
WE
C
IN
CE
0-1
C
IN
A0-A16
C
IN
RES
Output Capacitance: V
OUT
= 0V
1
C
Out
RDY/BSY
C
O ut
D0-D31
1. Guaranteed by design.
M
IN
--
--
--
--
--
--
--
--
79LV0832
M
AX
6
6
6
6
6
48
6
12
pF
U
NIT
pF
T
ABLE
6. 79LV0832 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
Memory
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
I
LI
S
UBGROUPS
1, 2, 3
M
IN
--
M
AX
4
2
720
2
720
2
U
NITS
µA
µA
µA
µA
µA
µA
mA
mA
mA
Input Leakage Current
1
V
IN
= V
CC
A0-A16, CE,WE, OE
Input Leakage Current
D0-D31
Standby V
CC
Current
1
V
IN
=V
IH
V
IN
=0V
V
IN
=V
CC
I
LI
I
LO
I
CC1A
I
CC1B
I
CC1C
I
CC2A
1, 2, 3
1, 2, 3
1, 2, 3
--
--
--
--
1, 2, 3
4
4
80
15
15
24
Output Leakage Current (V
CC
= 3.6V, V
OUT
= 3.6V/0.4V)
CE = ADDR=WE=OE =V
CC
CE = ADDR=WE=OE =V
IH
CE = V
IH
; ADDR=WE=OE =0V
Operating
V
CC
Current
1,3
OE = 0V; ADDR=WE=V
CC
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 1 us at V
CC
= 3.6V
OE =ADDR=WE=0V
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 1 us at V
CC
= 3.6V
OE = 0V; ADDR=WE=V
CC
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 200 ns at V
CC
=3.6V
OE =ADDR=WE=0V
I
OUT
= 0mA, CE Duty = 100%,
Cycle = 200 ns at V
CC
= 3.6V
Input Voltage
I
CC2B
1, 2, 3
--
40
mA
I
CC2C
1, 2, 3
60
mA
I
CC2D
1, 2, 3
--
100
mA
V
IL
V
IH
RES_PIN
V
H
1, 2, 3
2.2
V
CC
-0.5
0.8
V
01.10.05 Rev 8
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
