Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM
79LV0832
T
ABLE
8. 79LV0832 AC E
LECTRICAL
C
HARACTERISTICS
P
AGE
/D
WORD
E
RASE AND
P
AGE
/D
WORD
W
RITE
O
PERATION
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Data Latch Time
-200
-250
Byte Load Window
-200
-250
Byte Load Cycle
-200
-250
Time to Device Busy
-200
-250
Write Start Time
3
-200
-250
RES to Write Setup Time
4
-200
-250
V
CC
to RES Setup Time
4
-200
-250
1. Use this device in a longer cycle than this value.
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by desgin.
S
YMBOL
t
DL
S
UBGROUPS
9, 10, 11
700
750
t
BL
9, 10, 11
100
200
t
BLC
9, 10, 11
1
1
t
DB
9, 10, 11
100
120
t
DW
9, 10, 11
250
250
t
RP
9, 10, 11
100
100
t
RES
9, 10, 11
1
1
--
--
--
--
µs
--
--
µs
--
--
ns
30
30
ns
--
--
µs
--
--
µs
M
IN 1
M
AX
U
NITS
ns
Memory
01.10.05 Rev 8
All data sheets are subject to change without notice
7
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
