20 Megabit (512K x 40-Bit) EEPROM MCM
(V
CC
=3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-200
-250
Chip Enable Access Time OE = V
IL
, WE = V
IH
-200
-250
Output Enable Access TIme CE = V
IL
, WE = V
IH
-200
-250
Output Hold to Address Change CE = OE =V
IL
, WE = V
IH
-200
-250
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-200
-250
CE = OE = V
IL
, WE = V
IH
-200
-250
RES to Output Delay CE = OE = V
IL
, WE = V
IH3
-200
-250
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
t
CE
9, 10, 11
--
--
t
OE
9, 10, 11
0
0
t
OH
9, 10, 11
0
0
9, 10, 11
t
DF
0
0
t
DFR
0
0
t
RR
9, 10, 11
0
0
M
IN
79LV2040
M
AX
200
250
ns
200
250
ns
110
120
ns
--
--
ns
U
NIT
ns
T
ABLE
6. 79LV2040 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
Memory
50
50
ns
300
350
ns
525
600
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
7. 79LV2040 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Setup Time
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
t
CS
9, 10, 11
0
0
--
--
--
--
ns
M
IN 1
M
AX
U
NITS
ns
09.07.05 Rev 1
All data sheets are subject to change without notice
5
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
