20 Megabit (512K x 40-Bit) EEPROM MCM
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Time to Device Busy
-200
-250
Write Start Time
3
-200
-250
RES to Write Setup Time
4
-200
-250
V
CC
to RES Setup Time
4
-200
-250
1. Use this device in a longer cycle than this value.
S
YMBOL
t
DB
S
UBGROUPS
9, 10, 11
100
120
t
DW
9, 10, 11
150
250
t
RP
9, 10, 11
100
100
t
RES
9, 10, 11
1
1
M
IN 1
79LV2040
M
AX
--
--
ns
--
--
µs
--
--
µs
--
--
U
NITS
ns
T
ABLE
7. 79LV2040 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
Memory
T
ABLE
8. 79LV2040 M
ODE
S
ELECTION 1
P
ARAMETER
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
CE
2
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out
3
High-Z
RES
V
H
X
V
H
V
H
X
X
V
H
V
L
RDY/BUSY
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
Program Reset
X
X
1. Refer to the recommended DC operating conditions.
2. For CE
0-3
only one CE can be used (“on”) at a time.
3. Bits 7, 15, 23, 31 and 39
09.07.05 Rev 1
All data sheets are subject to change without notice
7
©2005 Maxwell Technologies
All rights reserved
MAXWELL [ MAXWELL TECHNOLOGIES ]
