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MX29F200BMC-70 参数 Datasheet PDF下载

MX29F200BMC-70图片预览
型号: MX29F200BMC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 2M- BIT [ 256Kx8 / 128Kx16 ] CMOS FLASH MEMORY [2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 46 页 / 720 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29F200T/B  
AUTOMATIC PROGRAMMING  
AUTOMATIC ERASE ALGORITHM  
The MX29F200T/B is byte programmable using the  
AutomaticProgrammingalgorithm. TheAutomaticPro-  
grammingalgorithmdoesnotrequirethesystemtotime  
out sequence or verify the data programmed. The  
typical chip programming time of the MX29F200T/B at  
room temperature is less than 2 seconds.  
MXIC's Automatic Erase algorithm requires the user to  
write commands to the command register using stand-  
ard microprocessor write timings. The device will auto-  
matically pre-program and verify the entire array. Then  
the device automatically times the erase pulse width,  
verifiestheerase andcountsthenumberofsequences.  
A status bit toggling between consecutive read cycles  
provides feedback to the user as to the status of the  
programming operation.  
AUTOMATIC CHIP ERASE  
Register contents serve as inputs to an internal state-  
machine which controls the erase and programming  
circuitry. During write cycles, the command register  
internally latches addresses and data needed for the  
programming and erase operations. During a system  
write cycle, addresses are latched on the falling edge,  
and data are latched on the rising edge of WE .  
The entire chip is bulk erased using 10 ms erase pulses  
according to MXIC's Automatic Chip Erase algorithm.  
Typicalerasureatroomtemperatureisaccomplishedin  
less than two second. The Automatic Erase algorithm  
automaticallyprogramstheentirearraypriortoelectrical  
erase. Thetimingandverificationofelectricaleraseare  
internally controlled by the device.  
MXIC's Flash technology combines years of EPROM  
experience to produce the highest levels of quality,  
reliability, and cost effectiveness. The MX29F200T/B  
electrically erases all bits simultaneously using Fowler-  
Nordheim tunneling. The bytes are programmed by  
using the EPROM programming mechanism of hot  
electron injection.  
AUTOMATIC SECTOR ERASE  
The MX29F200T/B is sector(s) erasable using MXIC's  
AutoSectorErasealgorithm. Sectorerasemodesallow  
sectorsofthearraytobeerasedinoneerasecycle. The  
Automatic Sector Erase algorithm automatically pro-  
grams the specified sector(s) prior to electrical erase.  
The timing and verification of electrical erase are inter-  
nally controlled by the device.  
During a program cycle, the state-machine will control  
the program sequences and command register will not  
respond to any command set. During a Sector Erase  
cycle, the command register will only respond to Erase  
Suspend command. After Erase Suspend is complete,  
the device stays in read mode. After the state machine  
hascompleteditstask,itwillallowthecommandregister  
to respond to its full command set.  
AUTOMATIC PROGRAMMING ALGORITHM  
MXIC's Automatic Programming algorithm requires the  
user to only write program set-up commands (include 2  
unlock write cycle and A0H) and a program command  
(program data and address). The device automatically  
times the programming pulse width, verifies the pro-  
gram, andcountsthenumberofsequences. Astatusbit  
similartoDATApollingandastatusbittogglingbetween  
consecutive read cycles, provides feedback to the user  
as to the status of the programming operation.  
P/N:PM0549  
REV. 1.3 , DEC. 24, 2001  
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