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MX29L1611TC-12 参数 Datasheet PDF下载

MX29L1611TC-12图片预览
型号: MX29L1611TC-12
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ 2M ×8 / 1M ×16 ]的CMOS单电压PAGEMODE FLASH EEPROM [16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM]
分类和应用: 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 39 页 / 659 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29L1611  
DATA PROTECTION  
The MX29L1611 is designed to offer protection against  
accidental erasure or programming caused by spurious  
system level signals that may exist during power  
transitions. During power up the device automatically  
resets the internal state machine in the Read Array  
mode. Also,withitscontrolregisterarchitecture,alteration  
of the memory contents only occurs after successful  
completion of specific multi-bus cycle command  
sequences.  
Thedevicealsoincorporatesseveralfeaturestoprevent  
inadvertent write cycles resulting from VCC power-up  
and power-down transitions or system noise.  
LOW VCC WRITE INHIBIT  
To avoid initiation of a write cycle during VCC power-up  
andpower-down,awritecycleislockedoutforVCCless  
thanVLKO(typically1.8V). IfVCC<VLKO,thecommand  
registerisdisabledandallinternalprogram/erasecircuits  
are disabled. Under this condition the device will reset  
tothereadmode. Subsequentwriteswillbeignoreduntil  
the VCC level is greater than VLKO. It is the user's  
responsibilitytoensurethatthecontrolpinsarelogically  
correct to prevent unintentional write when VCC is  
above VLKO.  
WRITE PULSE "GLITCH" PROTECTION  
Noisepulsesoflessthan10ns(typical)on CEorWEwill  
not initiate a write cycle.  
LOGICAL INHIBIT  
Writing is inhibited by holding any one of OE = VIL,CE =  
VIH or WE = VIH. To initiate a write cycle CE and WE  
must be a logical zero while OE is a logical one.  
P/N:PM0511  
REV. 2.4, NOV. 06, 2001  
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