MLX16303
Bi-directional Remote Sensor Unit Interface
Edges during voltage PWM ( programming mode)
Change from Voutx = low level to Voutx = high level
( with C=120nF & load consuming >= 5mA! –
connected)
Change from Voutx = high level to Voutx = low level
( with C=120nF & load –consuming >= 5mA! –
connected)
Capacity belonging to transmission
Current pulse transmission rate
10
tssio0vlh, tssio1vlh
10
µs
tssio0vlh, tssio1vlh
50
µs
120
nF
kHz
RETURN0, RETURN1
Voltage drop. (Ioutx
≤
45mA for 6.0V<VS<7.7V,
Ioutx
≤
35 mA for 4.9V < VS < 6.0V)
Short Circuit to GND diagnosis threshold:
Resistance from RETURNx to GND
only when required by user with channel off
Qualification time
Short Circuit to battery diagnosis threshold:
Resistance from RETURNx to battery
RETx: Voltage limit
Qualification time
RETURNx overtemperature protection:
Switch off Temperature of driver junction
Switch on Temperature of driver junction
treturn0srtgndq,
treturn1srtgndq
Rreturn0srtbat,
Rreturn1srtbat
Vret0>>,
Vret1>>
treturn0srtbatq,
treturn1srtbatq
treturn0tempoff,
treturn1tempoff
treturn0tempon,
treturn1tempon
130
150
°C
140
160
°C
500
2000
s
0.2
0.4
V
25
2.5K
500
2000
us
Vreturn0_sat
Vreturn1_sat
Rreturn0srtgnd,
Rreturn1srtgnd
280
4.5K
0
0.15
V
Ω
Ω
SSIO0, SSIO1 (bidirectional CMOS)
Input low level voltage SSIO0, SSIO1
Input high level voltage SSIO0, SSIO1
Input leakage current SSIO0, SSIO1
Input Hysteresis SSIO0, SSIO1
Output low voltage SSIO0, SSIO1 Ido = 1mA
Output high voltage SSIO0,SSIO1Ido = -1mA
Ioutx range to get according SSIOx low level
Rrtrip = 56k
Ioutx range to get according SSIOx high level
Rrtrip = 56k
3901016303
Rev. 004
VIL
VIH
IPL
IPH
VOL
VOH
ISSIO0high,
ISSIO1high
ISSIO0low,
ISSIO1low
Page 9 of 20
Data Sheet
Jun/04
5
16
mA
4
18
45
0.4
0.45
-0.5
3.8
2.0
5.5
+/- 0.5
V
V
V
mA
V
V
A
MELEXIS [ Melexis Microelectronic Systems ]
