TH3122
K-Bus Transceiver with integrated Voltage Regulator
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The absolute maximum ratings
given in the table below are limiting values that do not
lead to a permanent damage of the device but exceeding
any of these limits may do so. Long term exposure to
limiting values may affect the reliability of the device.
Reliable operation of the TH3122 is only specified within
the limits shown in ”Operating conditions”.
Operating Conditions
Parameter
Battery voltage
Supply voltage
Operating ambient temperature
Junction temperature
[1]
Symbol
V
S
V
CC
T
A
T
J
Min
5.25
4.75
-40
Max
16
5.25
+125
+150
Unit
V
V
°C
°C
Absolute Maximum Ratings
Parameter
Symbol
Condition
Min
-1.0
Supply voltage at VS
[2]
V
S
T
≤
1min
T
≤
500 ms
[2]
Max
16
30
40
30
Unit
-
-
-24
V
Input voltage at pin BUS
V
INBUS
V
T
≤
500 ms
-
-0.3
-0.3
-0.3
-25
-500
Internal limited
[3] [4]
50
150
-55
150
40
40
V
S
+0.3
V
CC
+0.3
25
500
V
V
V
mA
mA
mW
K/W
°C
°C
Difference VS-VCC
Input voltage at pin EN and SI
Input voltage at pin VTR, TxD, SEN/STA, SO, RESET, SENSE
Input current at pin EN, VTR, SI, SO, SEN/STA, TxD,
RxD,RESET, SENSE
Input current for short circuit of pin VS and VCC
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
[4]
Storage temperature
V
S-VCC
V
INENSI
V
IN
I
IN
I
Short
P
0
R
THJA
T
J
T
STG
______________________________
[1]
[2]
Junction temperature is defined in IEC 747-1
The current and voltage values are valid independent from each other.
[3]
The maximum power dissipation is defined by the ambient temperature and the thermal resistance. It can be calculated with
P
0
=(V
S
-V
CC
)*I
VCC
+P
BUS
. P
BUS
is the BUS driver output with normally
≤25
mW
[4]
see over temperature protection
3901003122
Rev 004
Page 7
Dec/04
MELEXIS [ Melexis Microelectronic Systems ]
