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24LC65-I/P 参数 Datasheet PDF下载

24LC65-I/P图片预览
型号: 24LC65-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 64K 1.8V I2C串行智能Ø EEPROM [64K 1.8V I2C Smart Serial O EEPROM]
分类和应用: 存储内存集成电路光电二极管双倍数据速率PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 24 页 / 285 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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24AA65/24LC65/24C65
FIGURE 8-2:
CACHE WRITE TO THE ARRAY STARTING AT A PAGE BOUNDARY
1 Write command initiated at byte 0 of page 3 in the array;
First data byte is loaded into the cache byte 0.
cache page 0
cache
byte 0
cache
byte 1
• • •
cache
byte 7
cache page 1 cache page 2
bytes 8-15
bytes 16-23
• • •
cache page 7
bytes 56-63
2 64 bytes of data are loaded into cache.
3 Write from cache into array initiated by STOP bit.
Page 0 of cache written to page 3 of array.
Write cycle is executed after every page is written.
page 0 page 1 page 2
page 0 page 1 page 2
byte 0
byte 1
• • •
4 Remaining pages in cache are written
to sequential pages in array.
byte 7
page 4
page 4
• • •
• • •
page 7 array row n
page 7 array row n + 1
page 3
5 Last page in cache written to page 2 in next row.
FIGURE 8-3:
CACHE WRITE TO THE ARRAY STARTING AT A NON-PAGE BOUNDARY
1 Write command initiated; 64 bytes of data
loaded into cache starting at byte 2 of page 0.
cache
byte 1
cache
byte 2
cache
byte 7
2 Last 2 bytes loaded 'roll over'
to beginning.
cache page 7
bytes 56-63
Last 2 bytes
loaded into
page 0 of cache.
3
cache
byte 0
• • •
cache page 1 cache page 2
bytes 8-15
bytes 16-23
• • •
4 Write from cache into array initiated by STOP bit.
5 Remaining bytes in cache are
Page 0 of cache written to page 3 of array.
Write cycle is executed after every page is written.
written sequentially to array.
page 7 array
row n
array
page 7 row
n+1
page 0 page 1 page 2
page 0 page 1 page 2
byte 0
byte 1
byte 2
byte 3
page 3
byte 4
• • •
byte 7
page 4
page 4
• • •
• • •
6 Last 3 pages in cache written to next row in array.
2003 Microchip Technology Inc.
DS21073J-page 13