MCP3201
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Maximum Ratings†
V
DD
...................................................................................7.0V
All inputs and outputs w.r.t. V
SS
................ -0.6V to V
DD
+0.6V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
ESD protection on all pins (HBM) .................................> 4 kV
†Notice:
Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
A
= -40°C to +85°C, f
SAMPLE
= 100 ksps, and
fCLK = 16*f
SAMPLE
, unless otherwise noted.
Parameter
Conversion Rate:
Conversion Time
Analog Input Sample Time
Throughput Rate
DC Accuracy:
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Gain Error
Dynamic Performance:
Total Harmonic Distortion
Signal to Noise and Distortion
(SINAD)
Spurious Free Dynamic Range
Reference Input:
Voltage Range
Current Drain
Analog Inputs:
Input Voltage Range (IN+)
Input Voltage Range (IN-)
Leakage Current
Switch Resistance
Sample Capacitor
Digital Input/Output:
Data Coding Format
High Level Input Voltage
Low Level Input Voltage
Note 1:
2:
3:
V
IH
V
IL
0.7 V
DD
—
Straight Binary
—
—
—
0.3 V
DD
V
V
R
SS
C
SAMPLE
IN+
IN-
IN-
V
SS
-100
—
—
—
0.001
1K
20
—
V
REF
+IN-
V
SS
+100
±1
—
—
V
mV
µA
W
pF
See
See
0.25
—
—
—
100
.001
V
DD
150
3
V
µA
µA
CS = V
DD
= 5V
THD
SINAD
SFDR
—
—
—
-82
72
86
—
—
—
dB
dB
dB
V
IN
= 0.1V to 4.9V@1 kHz
V
IN
= 0.1V to 4.9V@1 kHz
V
IN
= 0.1V to 4.9V@1 kHz
INL
DNL
—
—
—
—
—
12
±0.75
±1
±0.5
±1.25
±1.25
±1
±2
±1
±3
±5
bits
LSB
LSB
LSB
LSB
LSB
MCP3201-B
MCP3201-C
No missing codes over
temperature
t
CONV
t
SAMPLE
f
SAMPLE
—
—
—
1.5
—
100
50
12
clock
cycles
clock
cycles
ksps
ksps
V
DD
= V
REF
= 5V
V
DD
= V
REF
= 2.7V
Sym
Min
Typ
Max
Units
Conditions
This parameter is established by characterization and not 100% tested.
See graph that relates linearity performance to V
REF
level.
Because the sample cap will eventually lose charge, effective clock rates below 10 kHz can affect linearity performance,
especially at elevated temperatures. See
for more information.
©
2008 Microchip Technology Inc.
DS21290E-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
